The electrode in the underside of the probe head of the XF-E 10 is approx. 0.2 mm wide. This allows the smallest E-field sources to be localized, e.g. 0.1 mm wide conductor runs, individual IC pins on high-pole ICs. The E-field probe is placed on the measurement object for measurement.
The XF-E 10 is a passive near-field probe. It has the same basic design as the XF-E 04 and XF-E 09 probes, but the resolution of the XF-E 10 is significantly higher. Typically, the probe head is placed directly on the object to be measured (high electric field strength). It is not suitable for measurements at greater distances such as those carried out with the XF-E 04 and XF-E 09. The near-field probe is small and easy to handle. It has a sheath current attenuation and its upper side is electrically shielded. The near-field probe is connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The E-field probe has an internal terminating resistor.